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MPC7448 RISC Microprocessor Hardware Specifications, Rev. 4
Freescale Semiconductor 51
System Design Information
Due to the complexity and variety of system-level boundary conditions for today's microelectronic
equipment, the combined effects of the heat transfer mechanisms (radiation, convection, and conduction)
may vary widely. For these reasons, we recommend using conjugate heat transfer models for the board as
well as system-level designs.
For system thermal modeling, the MPC7448 thermal model is shown in Figure 26. Four volumes represent
this device. Two of the volumes, solder ball-air and substrate, are modeled using the package outline size
of the package. The other two, die and bump-underfill, have the same size as the die. The silicon die should
be modeled 8.0 × 7.3 × 0.86 mm
3
with the heat source applied as a uniform source at the bottom of the
volume. The bump and underfill layer is modeled as 8.0 × 7.3 × 0.07 mm
3
collapsed in the z-direction with
a thermal conductivity of 5.0 W/(m • K) in the z-direction. The substrate volume is 25 × 25 × 1.14 mm
3
and has 9.9 W/(m • K) isotropic conductivity in the xy-plane and 2.95 W/(m • K) in the direction of the
z-axis. The solder ball and air layer are modeled with the same horizontal dimensions as the substrate and
is 0.8 mm thick. For the LGA package the solder and air layer is 0.1 mm thick, but the material properties
are the same. It can also be modeled as a collapsed volume using orthotropic material properties:
0.034 W/(m • K) in the xy-plane direction and 11.2 W/(m • K) in the direction of the z-axis.
Figure 26. Recommended Thermal Model of MPC7448
Bump and Underfill
Die
Substrate
Solder and Air
Die
Substrate
Side View of Model (Not to Scale)
Top View of Model (Not to Scale)
x
y
z
Conductivity Value Unit
Die (8.0 × 7.3 × 0.86 mm
3
)
Silicon
Temperature-
dependent
W/(m • K)
Bump and Underfill (8.0 × 7.3 × 0.07 mm
3
)
k
z
5.0 W/(m • K)
Substrate (25 × 25 × 1.14 mm
3
)
k
x
9.9 W/(m • K)
k
y
9.9
k
z
2.95
Solder Ball and Air (25 × 25 × 0.8 mm
3
)
k
x
0.034 W/(m • K)
k
y
0.034
k
z
11.2
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